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    DPG15I400PM 0 100 200 300 400 500 600 20 40 [ns] 60 80 100 120 0 40 80 120 160 0.0 0.2 0.4 I 0.6 RM 0.8 1.0 1.2 1.4 Kf TVJ [°C] 0 100 200 300 400 500 600 0 2 4 6 [V] 8 FR10 12 14 16 18 0 50 100 150 200fr[ns] 250 300 350 400 450 V 0 100 200 300 400 500 600 2 4 [A] 6 RM 8 10 12 0 100 200 300 400 500 600 0.0 0.1 0.2 0.3 0.4 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 [A] 30 40 50 60 70 80 I Qrr [μC] IF VF [V] -diF/dt [A/μs] trr VFR tfr Qrr 30 A 15 A -diF/dt [A/μs] -diF/dt [A/μs] 7.5 A 15 A -diF/dt [A/μs] 0.001 0.01 0.1 1 10 0 1 2 3 4 t[s] ZthJC [K/W] 0 100 200 300 400 500 600 0 5 μJ]10 rec 15 20 25 E [ -diF/dt [A/μs] IF = 30 A IF = 15 A IF = 7.5 A IF = 30 A IF = 15 A IF = 7.5 A Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qrr versus -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 4 Dynamic parameters Qrr,IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 7 Typ. recovery energy Erec versus -diF/dt t Fig. 8 Transient thermal resistance junction to case 7.5 A TVJ = 25°C 150°C TVJ= 125°C VR =270 V TVJ= 125°C VR = 270 V TVJ= 125°C VR =270 V TVJ= 125°C IF = 15 A VR = 270 V TVJ= 125°C VR = 270 V IF =30A Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131101a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |